Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
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1. Atomic layer annealing for spatial tailoring in sub-4 nm AlN RRAM devices with low-voltage operation;Journal of Alloys and Compounds;2024-07
2. Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices;ACS Applied Nano Materials;2024-05-01
3. High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing;Materials Chemistry and Physics;2023-08
4. Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-05
5. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD;Superlattices and Microstructures;2018-08
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