The growth of SiGe on sapphire using rapid thermal chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
2. High speed p-type SiGe modulation-doped field-effect transistors
3. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
4. Advanced thin-film silicon-on-sapphire technology: microwave circuit applications
5. Epitaxial growth of SiGe on Al2O3 using Si2H6 gas and Ge solid source molecular beam epitaxy
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1. GaAs epitaxial growth on R-plane sapphire substrate;Journal of Crystal Growth;2020-10
2. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System;Journal of Electronic Materials;2020-05-22
3. Lattice-alignment mechanism of SiGe on Sapphire;Acta Materialia;2018-02
4. High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets;ADV COND MATTER PHYS;2015
5. Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering;Journal of Crystal Growth;2012-08
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