Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy

Published:2001-07 Issue: Volume:227-228 Page:605-608
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lin C,Zheng Y.L,Li A.Z

Publisher

Elsevier BV

Reference4 articles.

1. <title>GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths</title>

2. GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

3. Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range

4. High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window

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