Characterization and evaluation of current transport properties of power SiC Schottky diode

Author:

Chvála AlešORCID,Marek JurajORCID,Drobný Jakub,Stuchlíková Ľubica,Alberto Messina Angelo,Vinciguerra Vincenzo,Donoval Daniel

Publisher

Elsevier BV

Subject

General Medicine

Reference15 articles.

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4. J. L. Hostetler, M. O’Grady, W. Simon, X. Huang, M. Fox, A. Bhalla. High Current (650V-200A, 1200V-100A) Single SiC Diodes. IEEE Workshop on Wide Bandgap Power Devices and Applications, Fayetteville, AR, USA, 2016, p.147-151.

5. The “first and euRopEAn siC eigTh Inches pilOt line” - REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development;Bieniek;TechConnect Briefs,2019

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