Development of high-temperature stable dielectric material-Reference-Cited by-同舟云学术

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Development of high-temperature stable dielectric material

Published:2023-06 Issue: Volume: Page:
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Lakra Hemraj^ORCID,Kumar Mittal Shivam,Yadav K.L.

Publisher

Elsevier BV

Subject

General Medicine

Reference22 articles.

1. Low variation in relative permittivity over the temperature range 25–450 °C for ceramics in the system (1–x)[Ba0.8Ca0.2TiO3]–x[Bi(Zn0.5Ti0.5)O3];Zeb;J. Eur. Ceram. Soc.,2014

2. A high-temperature-capacitor dielectric based on K0.5Na0.5NbO3-Modified Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3;Dittmer;J. Am. Ceram. Soc.,2012

3. Lead-Free relaxor ferroelectrics;Shvartsman;J. Am. Ceram. Soc.,2012

4. Ba0.6Sr0.4TiO3, and BaZr0.3Ti0.7O3 thick films as tunable microwave dielectrics;Zimmermann;J. Eur. Ceram. Soc.,2004

5. The effect of Zr content on electrical properties of Ba(Ti1-xZrx)O3 ceramics;Sawangwan;Appl. Phys. A Mater. Sci. Process.,2008

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