Reaction kinetics in tungsten/barrier metal/silicon systems-Reference-Cited by-同舟云学术

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Reaction kinetics in tungsten/barrier metal/silicon systems

Published:1988-12 Issue: Volume:166 Page:1-14
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Suguro K.,Nakasaki Y.,Inoue T.,Shima S.,Kashiwagi M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Diffusion barriers in thin films

2. Tech. Dig. IEEE Int. Electron Device Meet.;Moriya,1983

3. Tech. Dig. IEEE Int. Electron Device Meet.;Gargini,1981

4. Tech. Dig. IEEE Int. Device Meet.;Blewer,1984

5. Tech. Dig. IEEE Int. Electron Device Meet.;Ito,1985

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2. Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates;Journal of Vacuum Science & Technology A;2018-11

3. Sputtering Targets and Thin Films for Integrated Circuits;Sputtering Materials for VLSI and Thin Film Devices;2014

4. Thermal stability of N2–H2plasma-treated metal-organic-vapor-deposition TiN in a W/TiN/Ti/Si system;Semiconductor Science and Technology;2011-09-06

5. Kinetic studies of the formation of nanocrystalline chromium silicide-silicon carbide from homogeneous amorphous precursor powders;Materials Science and Engineering: B;1995-05

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