MOS processing for III–V compound semiconductors: Overview and bibliography-Reference-Cited by-同舟云学术

MOS processing for III–V compound semiconductors: Overview and bibliography

Published:1977-10 Issue:1 Volume:46 Page:17-45
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wilmsen C.W.,Szpak S.

Publisher

Elsevier BV

Reference498 articles.

1. Etching of dislocations on the low-index faces of GaAs;Abrahams;J. Appl. Phys.,1965

2. Gallium arsenide surface film evaluation by ellipsometry and its effect on Schottky barriers;Adams;J. Electrochem. Soc.,1973

3. Investigation of the kinetics of growth of an oxide film on the surface of indium;Ageev;Sov. Physics—Solid State,1968

4. Monitored etching of gallium arsenide epitaxial layers and aluminum arsenide (AlxGa1−xAs) solid solutions, and its use in integral optics;Alferov;Zh. Tekh. Fiz.,1975

5. The electrochemical characterization of n-type gallium arsenide;Ambridge;J. Appl. Electrochem.,1973

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3. Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H₂;Japanese Journal of Applied Physics;2014-03-06

4. Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces;Physical Review B;2011-05-31

5. Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide;Applied Physics Letters;2006-11-13