Novel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide-Reference-Cited by-同舟云学术

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Novel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide

Published:1989-11 Issue:2-3 Volume:222 Page:L819-L824
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kolobov Alexander V.,Badyal Jas Pal S.,Lambert Richard M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. G.E. Bedel'baeve, A.V. Kolobov and V.M. Lyubin, Phil. Mag., in press.

2. Vacuum Deposition of Thin Films;Holland,1966

3. Photostructural changes in chalcogenide glasses

4. Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation

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1. Controlling thermal-induced dewetting of As20Se80 thin films for integrated photonics applications;Optical Materials Express;2021-05-14

2. Raman evidence for surface oxidation of amorphous As2S3 thin films under ultraviolet irradiation;Applied Surface Science;2019-02

3. Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation;Applied Surface Science;2017-02

4. Investigating the Roles of Dissolved Organic Matter on Arsenic Mobilization and Speciation in Environmental Water;CLEAN - Soil, Air, Water;2016-05-25

5. Reversible Photostructural Changes;Chalcogenides;2012

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