The self-organization of Si atoms adsorbed on a Si(100) surface: an atomic level kinetic model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Nucleation and growth of epitaxial silicon on Si(001) and Si(111) surfaces by scanning tunneling microscopy
2. Growth and equilibrium structures in the epitaxy of Si on Si(001)
3. Ab InitioStudy of Elementary Processes in Silicon Homoepitaxy -- Adsorption and Diffusion on Si(001)
4. Binding and diffusion of a Si adatom on the Si(100) surface
5. Adsorption and diffusion sites of a Si atom on a reconstructed Si(100)-(2 × 1) surface
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1. Si(100)2×1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth;Physics Procedia;2013
2. Kinetic Monte Carlo simulation of the epitaxial growth of Si(100);physica status solidi (c);2012-09-11
3. Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED;Nanoscale Research Letters;2011-03-14
4. Multiscale modelling of nanostructures;Journal of Physics: Condensed Matter;2004-12-07
5. Models for adatom diffusion on fcc (001) metal surfaces;Physical Review B;1999-07-15
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