Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space-Reference-Cited by-同舟云学术

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Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space

Published:2018-04 Issue: Volume:147 Page:50-54
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Reisinger M.,Ostermaier C.,Tomberger M.,Zechner J.,Sartory B.,Ecker W.,Daumiller I.,Keckes J.

Funder

Austrian Research Promotion Agency

Carinthian Economic Promotion Fund

Austrian Federal Government

Styrian

Tyrolean Provincial Government

Publisher

Elsevier BV

Reference19 articles.

1. Stresses in bi-material GaN assemblies

2. Residual stress evaluation at the micro- and nano-scale: Recent advancements of measurement techniques, validation through modelling, and future challenges

3. Cross-sectional stress distribution in Al x Ga 1-x N heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

4. A direct method of determining complex depth profiles of residual stresses in thin films on a nanoscale

5. Critical assessment of the determination of residual stress profiles in thin films by means of the ion beam layer removal method

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO2/Si Interfaces after Different Thermal Loading;Materials;2023-01-03

2. The growth mode and Raman scattering characterization of m-AlN crystals grown by PVT method;Journal of Alloys and Compounds;2020-05

3. Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy;Технология и конструирование в электронной аппаратуре;2020

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