Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals-Reference-Cited by-同舟云学术

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Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Published:2014-07 Issue: Volume:82 Page:17-20
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

He Yihui,Jie Wanqi,Xu Yadong,Wang Yuecun,Zhou Yan,Liu Huimin,Wang Tao,Zha Gangqiang

Funder

National Natural Science Foundations of China

National Basic Research Program of China

111 Project of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference30 articles.

1. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

2. Investigation of the limitations of the highly pixilated CdZnTe detector for PET applications

3. Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

4. Cumulative effects of Te precipitates in CdZnTe radiation detectors

5. Tellurium antisites in CdZnTe

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1. Enhanced performance CdZnTe single crystal with few surface damages via solution based annealing;Sensors and Actuators A: Physical;2024-04

2. Effects of Homogeneous Buffer Layer on the Crystalline Quality And Electrical Properties of Czt Epitaxial Films;2024

3. Pressure-induced disorder and nanosizing inhibits superconductivity in In₂Te₃;Nanotechnology;2023-11-15

4. Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound;Vacuum;2023-11

5. Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures;Applied Physics Letters;2023-02-20

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