Assessment of plasma-grown oxides on Si:Ge substrates-Reference-Cited by-同舟云学术

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Assessment of plasma-grown oxides on Si:Ge substrates

Published:1989-10 Issue:1-4 Volume:39 Page:57-64
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hall S.,Zhang J.F.,Taylor S.,Eccleston W.,Beahan P.,Tatlock G.T.,Gibbings C.J.,Smith C.,Tuppen C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Physics and applications of GexSi1-x/Si strained-layer heterostructures

2. Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon

3. The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values

4. IEEE Bipolar Circuits and Technology Meeting;Smith,1987

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4. Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe;Journal of Electronic Materials;2002-12

5. X-ray photoelectron spectroscopy investigations of ultrathin layers grown by ultraviolet-assisted oxidation of SiGe;Applied Surface Science;2002-01

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