Quantitative evaluation of the surface segregation in III–V ternary alloys by X-ray photoelectron spectroscopy
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference8 articles.
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3. Surface segregation and growth interface roughening in AlxGa1-xAs
4. 5th Intern. Conf. on Molecular Beam Epitaxy;Houzay,1988
5. Study of the x-ray photoelectron spectrum of tungsten—tungsten oxide as a function of thickness of the surface oxide layer
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1. Polar discontinuity governs surface segregation and interface termination: A case study of LaInO3/BaSnO3;Physical Review Materials;2024-03-29
2. Molecular beam epitaxy of III–V semiconductors;Critical Reviews in Solid State and Materials Sciences;1993-01
3. The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS;Journal of Crystal Growth;1992-02
4. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy;Applied Physics Letters;1991-07-15
5. Local electronic distribution on Al sites at GaAs/AlAs interface;Journal of Physics: Condensed Matter;1991-05-20
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