Mechanistic studies of the initial stages of etching of Si and SiO2 in a CHF3 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference31 articles.
1. Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2
2. Parameter and Reactor Dependence of Selective Oxide RIE in CF 4 + H 2
3. Profile control by reactive sputter etching
4. In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges
5. Plasma-Assisted Etching in Microfabrication
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