Study of the diffusion path during the lateral growth in the salicide process

Author:

Bakli M.,Göltz G.,Caranhac S.,Bomchil G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology;Metallic Films for Electronic, Optical and Magnetic Applications;2014

2. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

3. Silicides and ohmic contacts;Materials Chemistry and Physics;1998-02

4. Transition metal silicides in silicon technology;Reports on Progress in Physics;1993-11-01

5. Silicides for integrated circuits: TiSi2 CoSi2;Materials Science and Engineering: R: Reports;1993-11

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