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Ultraviolet laser ablation of Si3N4 thin films

  • Published:1994-05 Issue: Volume:79-80 Page:146-151
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Takigawa Yasuo,Hemminger John C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and Stability of M6N8 Clusters (M = Si, Ge, Sn, Ti);The Journal of Physical Chemistry A;2010-05-13

2. Solid-state NMR investigations of Si-29 and N-15 enriched silicon nitride;Solid State Nuclear Magnetic Resonance;2009-09

3. Growth of β-FeSi2Thin Films on Silicon Substrates by Pulsed Laser Deposition Usingε-FeSi Alloy Targets;Japanese Journal of Applied Physics;2007-02-08

4. Laser induced vaporization mass spectrometric studies on Si3N4;International Journal of Mass Spectrometry;1998-07

5. Temperature dependence of silicon precipitation in thin surface layer of Si3N4 induced by excimer laser irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08
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