3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells-Reference-Cited by-同舟云学术

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3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Published:2014-01 Issue: Volume:120 Page:48-58
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Ochoa M.,Algora C.,Espinet-González P.,García I.

Funder

Spanish Ministerio de Economía y Competitividad

NUMANCIA II

NGCPV

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Degradation mechanism analysis in temperature stress tests on III–V ultra-high concentrator solar cells using a 3D distributed model;Espinet;Microelectronics Reliability,2010

2. Surface and perimeter recombination in GaAs diodes;Dodd;IEEE Transactions on Electron Devices,1991

3. Surface recombination in GaAs PN junction diode;Mazhari;Journal of Applied Physics,1993

4. Modelling of the perimeter recombination effect in GaAs-based micro-solar cell;Belghachi;Solar Energy Materials and Solar Cells,2006

5. H. Atwater, Paths to high efficiency low-cost photovoltaics, in: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, pp. 1–3.

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