Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer-Reference-Cited by-同舟云学术

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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

Published:2019-06 Issue: Volume:195 Page:204-212
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Chancerel F.^ORCID,Regreny P.,Leclercq J.L.,Brottet S.,Volatier M.,Jaouad A.,Darnon M.^ORCID,Fafard S.,Blanchard N.P.,Gendry M.,Aimez V.

Funder

Région Auvergne-Rhône-Alpes

UdeS

CNRS

Université de Lyon

Université Grenoble Alpes

FRQNT

NSERC

ANR

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Four-junction wafer-bonded concentrator solar cells;Dimroth;IEEE J. Photovolt.,2016

2. Quantum cascade laser;Faist;Science,1994

3. Electron transport in Multigate InxGa1−xAs nanowire FETs: from diffusive to ballistic regimes at room temperature;Thathachary;Nano Lett.,2014

4. InGaAs/AlInGaAs THz quantum cascade lasers operating up to 195 K in strong magnetic field;Valmorra;New J. Phys.,2015

5. Recent advances in avalanche photodiodes;Campbell;J. Light. Technol.,2008

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4. Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates;EPJ Photovoltaics;2023

5. Epitaxial lift-off process for GaAs solar cells controlled by InGaAs internal sacrificial stressor layers and a PMMA surface stressor;Solar Energy Materials and Solar Cells;2022-12

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