Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics-Reference-Cited by-同舟云学术

Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

Published:2014-01 Issue: Volume:120 Page:270-274
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Feldmann Frank,Bivour Martin,Reichel Christian,Hermle Martin,Glunz Stefan W.

Funder

German Federal Ministry for the Environment, Nature Conservation, and Nuclear Safety

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference28 articles.

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4. Oxygen-doped polycrystalline silicon films applied to surface passivation;Aoki;Journal of the Electrochemical Society,1975

5. Silicon heterojunction transistor;Matsushita;Applied Physics Letters,1979

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