Ultra-thin atomic layer deposited aluminium oxide tunnel layer passivated hole-selective contacts for silicon solar cells

Author:

Xin Zheng,Ling Zhi Peng,Wang Puqun,Ge Jia,Ke Cangming,Choi Kwan Bum,Aberle Armin G.ORCID,Stangl Rolf

Funder

National University of Singapore

Economic Development Board - Singapore

EIRP-07 project

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Modelling the PERC structure for industrial quality silicon;Catchpole;Sol. Energy Mater. Sol. Cells,2002

2. N-Type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation;Richter;Sol. Energy Mater Sol. Cells,2017

3. S.W. Glunz, F. Feldmann, A. Richter, M. Bivour, C. Reichel, H. Steinkemper, J. Benick, M. Hermle, The irresistible charm of a simple current flow pattern-25% with a solar cell featuring a full area back contact, in: Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2015, pp. 259–263.

4. Passivating contacts for silicon solar cells based on boron-diffused recrystallized amorphous silicon and thin dielectric interlayers;Yan;Sol. Energy Mater. Sol. Cells,2016

5. Junction resistivity of carrier-selective polysilicon on oxide junctions and its impact on solar cell performance;Rienacker;IEEE J. Photovolt.,2016

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