Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment-Reference-Cited by-同舟云学术

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Published:2013-11 Issue: Volume:547 Page:106-110
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lim Jong-Won,Ahn Ho-Kyun,Kim Seong-il,Kang Dong-Min,Lee Jong-Min,Min Byoung-Gue,Lee Sang-Heung,Yoon Hyung-Sup,Ju Chull-Won,Kim Haecheon,Mun Jae-Kyoung,Nam Eun-Soo,Park Hyung-Moo

Funder

Korea Ministry of Knowledge Economy (MKE/KEIT)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High-voltage normally off GaN MOSFETs on sapphire substrates

2. Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

3. Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

4. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

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3. Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures;Solid-State Electronics;2018-02

4. A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT;Solid-State Electronics;2017-11

5. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications;Journal of the Korean Physical Society;2017-09