Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference53 articles.
1. Band alignment between GaN and ZrO2 formed by atomic layer deposition;Ye;Appl. Phys. Lett.,2014
2. Review of GaN HEMT applications in power converters over 500W;Ma;Electronics (Switzerland),2019
3. GaN based heterostructure for high power devices;Asif Khan;Solid State Electron.,1997
4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening;Fujii;Appl. Phys. Lett.,2004
5. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric;Ye;Appl. Phys. Lett.,2005
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献