Achieving tunable work function in MoO thin films: A key to low-cost, high-performance organic electronics
Author:
Funder
National Natural Science Foundation of China
Innovative Research Group Project of the National Natural Science Foundation of China
Publisher
Elsevier BV
Reference43 articles.
1. Effective performance improvement of organic thin film transistors by using tri-layer insulators;Ni;Eur. Phys.l J. Appl. Phys.,2018
2. Optimization of deposition conditions to tune optoelectronic properties of MoO3-x films prepared by rf-sputtering technique;Kumari;Vacuum,2023
3. Enhanced organic thin-film transistor stability by preventing MoO3 diffusion with metal/moo3/organic multi layered interface source-drain contact;Yang;ACS Appl. Mater. Interfaces,2023
4. Effect of oxygen plasma treatment on air exposed MoOx thin film;Liu;Org. Electron.,2014
5. Origin of the high work function and high conductivity of MoO3;Guo;App. Phys. Lett.,2014
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