Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate
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Elsevier BV
Reference16 articles.
1. Molecular beam epitaxial growth and characterization of InSb on Si
2. Heterostructures on Silicon: One Step Further with Silicon;Houghton,1989
3. Molecular-beam epitaxial growth of InSb on GaAs and Si for infrared detector applications
4. Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
5. Two-dimensional growth of InSb thin films on GaAs(111)A substrates
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