Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application-Reference-Cited by-同舟云学术

Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application

Published:2011-10 Issue:24 Volume:519 Page:8532-8537
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hayakawa Yasuhiro,Arivanandhan Mukannan,Saito Yosuke,Koyama Tadanobu,Momose Yoshimi,Ikeda Hiroya,Tanaka Akira,Wen Cuilian,Kubota Yoshihiro,Nakamura Tamotsu,Bhattacharya Shovit,Aswal Dinesh Kumar,Babu Sridharan Moorthy,Inatomi Yuko,Tatsuoka Hirokazu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]

2. Elektrische Eigenschaften Der Intermetallischen Verbindungen Mg2Si, Mg2Ge, Mg2Sn Und Mg2Pb

3. Growth of Mg2Si1−xGex layers on silicon–germanium substrates

4. Czochralski growth of Si- and Ge-rich SiGe single crystals

5. Segregation during the seeding process in the Czochralski growth of GeSi alloys

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