Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatment
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Published:2024-06
Issue:
Volume:798
Page:140388
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ISSN:0040-6090
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Container-title:Thin Solid Films
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language:en
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Short-container-title:Thin Solid Films
Author:
Beji Hiba,
Develay Valentin,
Monier GuillaumeORCID,
Bideux LucORCID,
Hoggan Philip E.ORCID,
Bousquet AngeliqueORCID,
Tomasella Eric,
Robert-Goumet ChristineORCID