Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate-Reference-Cited by-同舟云学术

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Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Published:2007-03 Issue:10 Volume:515 Page:4517-4521
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Arulkumaran S.,Liu Z.H.,Ng G.I.,Cheong W.C.,Zeng R.,Bu J.,Wang H.,Radhakrishnan K.,Tan C.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

2. IEEE IMS Digest;Ellis,2004

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11

2. Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate;Journal of Physics: Conference Series;2021-11-01

3. Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT;Microelectronic Engineering;2021-07

4. Augmentation and Assessment of a Universal FET ${I}$ –${V}$ Model for Simulating GaN HEMTs;IEEE Transactions on Electron Devices;2020-03

5. Extreme Temperature Modeling of AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2020-02

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