The role of carbon in the precipitation of oxygen in silicon
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference12 articles.
1. Mechanism of the Formation of Donor States in Heat-Treated Silicon
2. Precipitation of oxygen in silicon
3. S.M. Hu, to be published.
4. A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials
5. New Oxygen Infrared Bands in Annealed Irradiated Silicon
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Czochralski Silicon Growth Technique which Reduces Carbon to the Order of 1014 per Cubic Centimeter;Journal of The Electrochemical Society;1994-08-01
2. Chapter 1 Introduction to Oxygen in Silicon;Semiconductors and Semimetals;1994
3. Deep Traps in Doubly Implanted p-Type Silicon DITS andC—U Measurements;Physica Status Solidi (a);1989-03-16
4. Observation of micro-defects in as-grown and heat treated Si crystals by infrared laser scattering tomography;Journal of Crystal Growth;1989-01
5. Grown-In and Process-Induced Defects;Semiconductor Silicon Crystal Technology;1989
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