On the existence of two non-equivalent lattice positions of donors in n-type InSb-Reference-Cited by-同舟云学术

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On the existence of two non-equivalent lattice positions of donors in n-type InSb

Published:1974-06 Issue:3 Volume:48 Page:189-190
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Porowski S.,Kończykowski M.,Chroboczek J.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference3 articles.

1. M. Kończykowski, S. Porowski and J. Chroboczek, accepted for publication in High Temperatures - High Pressures (England).

2. Some Properties of a Double Acceptor Center in CdTe

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1. Donors in Semiconductors - are they Understood in Electronic Era?;Journal of Physics: Conference Series;2007-08-01

2. Resonant localized donor state above the conduction band minimum in InN;Applied Physics Letters;2005-06-27

3. Iodine-impurity level in MBE-grownCd1−xMnxTe;Physical Review B;1999-05-15

4. Chapter 1 High Pressure in Semiconductor Physics: A Historical Overview;Semiconductors and Semimetals;1998

5. Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure;Journal of Physics and Chemistry of Solids;1995-03

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