Lattice dilatation of boron in silicon
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference9 articles.
1. Unidirectional contraction in boron‐implanted laser‐annealed silicon
2. Densitometric and Electrical Investigation of Boron in Silicon
3. X-ray measurement of elastic strain and lattice constant of diffused silicon
4. Lattice parameter study of silicon uniformly doped with boron and phosphorus
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of local relaxation on the binding energy of group-V donors in silicon;Physical Review B;1992-07-15
2. Measurement of the mechanical properties of silicon microresonators;Sensors and Actuators A: Physical;1991-09
3. Measurement of Young's modulus and internal stress in silicon microresonators using a resonant frequency technique;Measurement Science and Technology;1990-12-01
4. Silicon in mechanical sensors;Journal of Physics E: Scientific Instruments;1988-12
5. A spectroscopic investigation of the lattice distortion at substitutional sites for groups V and VI donors in silicon;Journal of Physics C: Solid State Physics;1987-11-20
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