Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations-Reference-Cited by-同舟云学术

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Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

Published:2019-11 Issue: Volume:169 Page:109119
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Olsson Emilia^ORCID,Cai Qiong,Cottom Jonathon^ORCID,Jakobsen Rasmus,Shluger Alexander L.

Funder

Leverhulme Trust

EPSRC

Publisher

Elsevier BV

Reference97 articles.

1. Effect of oxidation temperature on physical and electrical properties of Sm2O3 thin-film gate oxide on Si substrate;Goh;J. Electron. Mater.,2016

2. Lanthanide rare earth oxide thin film as an alternative gate oxide;Goh;Mater. Sci. Semicond. Process.,2017

3. Preparation and characterization of high- kpraseodymium and lanthanoid oxide thin films prepared by pulsed laser deposition;Kitai;Japanese J. Appl. Phys.,2003

4. Silicon MIS structures using samarium oxide films;Rozhkov;Thin Solid Films,1998

5. W.C. Chin, K.Y. Cheong, Z. Hassan, Sm2O3 gate dielectric on Si substrate (2010).https://doi.org/10.1016/j.mssp.2011.02.001.

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