Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts
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Published:2022-08-04
Issue:3
Volume:51
Page:
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ISSN:0352-9045
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Container-title:Informacije MIDEM - Journal of Microelectronics, Electronic Components and Materials
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language:
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Short-container-title:Informacije MIDEM
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials