Low-Temperature Cu-Cu Bonding using Nanocrystalline Grains-Reference-Cited by-同舟云学术

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Low-Temperature Cu-Cu Bonding using Nanocrystalline Grains

Published:2024-04-17 Issue: Volume: Page:109-110
ISSN:
Container-title:2024 International Conference on Electronics Packaging (ICEP)
language:
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Author:

Li Chen-Ning¹,Chiu Wei-Lan²,Chang Hsiang-Hung²,Chen Chih¹

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan (R.O.C.)

2. Industrial Technology Research Institute (ITRI),Electronic and Optoelectronic System Research Laboratories,Hsinchu,Taiwan (R. O. C.)

Funder

NSTC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10535428/10535429/10535635.pdf?arnumber=10535635

Reference5 articles.

1. Comparison of oxidation in uni-directionally and randomly oriented Cu films for low temperature Cu-to-Cu direct bonding

2. Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

3. Periodic reverse electrodeposition of (1 1 1)-oriented nanotwinned Cu in small damascene SiO2 vias

4. Low-Temperature Wafer-to-Wafer Hybrid Bonding by Nanocrystalline Copper

5. The Influence of Cu Microstructure on Thermal Budget in Hybrid Bonding

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