High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability-Reference-Cited by-同舟云学术

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High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Published:2021-05-30 Issue: Volume: Page:
ISSN:
Container-title:2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Zhou Feng,Xu Weizong,Ren Fangfang,Chen Dunjun,Zhang Rong,Zheng Youdou,Zhu Tinggang,Lu Hai

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9452126/9452187/09452308.pdf?arnumber=9452308

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. 3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness;Micro and Nanostructures;2022-10

4. Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability;IEEE Transactions on Electron Devices;2022-10

5. 70-μm-Body Ga₂O₃ Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency;IEEE Electron Device Letters;2022-05

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