Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

Abstract

AbstractMALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 $$\times $$ × 10$$^{15}$$ 15 1 MeV $$\mathrm {n_{eq}/{cm}^2}$$ n eq / cm 2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.