Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions-Reference-Cited by-同舟云学术

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Published:2019-06-07 Issue:6 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Lin Yuxuan¹^ORCID,Ma Qiong²,Shen Pin-Chun¹^ORCID,Ilyas Batyr²^ORCID,Bie Yaqing²,Liao Albert¹,Ergeçen Emre²,Han Bingnan¹³^ORCID,Mao Nannan¹,Zhang Xu¹,Ji Xiang¹,Zhang Yuhao¹^ORCID,Yin Jihao³^ORCID,Huang Shengxi⁴^ORCID,Dresselhaus Mildred¹²,Gedik Nuh²^ORCID,Jarillo-Herrero Pablo²^ORCID,Ling Xi⁵,Kong Jing¹^ORCID,Palacios Tomás¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

2. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

3. School of Astronautics, Beihang University, Beijing 100191, China.

4. Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA.

5. Department of Chemistry and Division of Materials Science and Engineering, Boston University, Boston, MA 02215, USA.

Abstract

The broadband photothermoelectric effect has been studied on a graphene-2D semiconductor lateral heterojunction.

Funder

National Science Foundation

U.S. Department of Energy

Air Force Office of Scientific Research

Army Research Office

Gordon and Betty Moore Foundation

Boston University

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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