Dislocation-driven growth of two-dimensional lateral quantum-well superlattices-Reference-Cited by-同舟云学术

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

Published:2018-03-02 Issue:3 Volume:4 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhou Wu¹²^ORCID,Zhang Yu-Yang¹³^ORCID,Chen Jianyi⁴,Li Dongdong¹,Zhou Jiadong⁵^ORCID,Liu Zheng⁵^ORCID,Chisholm Matthew F.²^ORCID,Pantelides Sokrates T.¹³^ORCID,Loh Kian Ping⁴^ORCID

Affiliation:

1. School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China.

2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

3. Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA.

4. Department of Chemistry and Centre for Advanced 2D Materials, National University of Singapore, 3 Science Drive 3, Singapore 117546, Singapore.

5. School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.

Abstract

Inherent strain in lattice mismatched lateral heterostructures can help to create quantum-well superlattices in the 2D limit.

Funder

U.S. Department of Energy

National Research Foundation-Prime Minister’s office, Republic of Singapore

National Natural Science Foundation of China

McMinn Endowment

Office of Science of the U.S. Department of Energy

Chinese Academy of Sciences

Publisher