Approaching the ideal elastic strain limit in silicon nanowires-Reference-Cited by-同舟云学术

Approaching the ideal elastic strain limit in silicon nanowires

Published:2016-08-05 Issue:8 Volume:2 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhang Hongti¹²,Tersoff Jerry³,Xu Shang¹⁴,Chen Huixin⁵,Zhang Qiaobao¹,Zhang Kaili¹,Yang Yong⁵,Lee Chun-Sing⁴⁶^ORCID,Tu King-Ning⁷,Li Ju⁸^ORCID,Lu Yang¹²⁴⁹^ORCID

Affiliation:

1. Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Hong Kong Special Administrative Region (SAR) 999077, China.

2. Centre for Advanced Structural Materials, City University of Hong Kong, Hong Kong SAR 999077, China.

3. IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.

4. Centre of Super-Diamond and Advanced Films, City University of Hong Kong, Hong Kong SAR 999077, China.

5. State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen 361005, China.

6. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR 999077, China.

7. Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA.

8. Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

9. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China.

Abstract

Single-crystalline silicon nanowires can be reversibly stretched above 10% elastic strain at room temperature.

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee, Hong Kong

National Science Foundation

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference56 articles.