Semiconductor quantum dots: Technological progress and future challenges-Reference-Cited by-同舟云学术

Semiconductor quantum dots: Technological progress and future challenges

Published:2021-08-06 Issue:6555 Volume:373 Page:
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

García de Arquer F. Pelayo¹²^ORCID,Talapin Dmitri V.³^ORCID,Klimov Victor I.⁴^ORCID,Arakawa Yasuhiko⁵,Bayer Manfred⁶^ORCID,Sargent Edward H.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.

2. ICFO–Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Barcelona 08860, Spain.

3. Department of Chemistry, University of Chicago, Chicago, IL 60637, USA.

4. Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

5. University of Tokyo, Meguro, Tokyo 153-8505, Japan.

6. Technische Universitat Dortmund, 44221 Dortmund, Germany.

Abstract

Advances in colloidal quantum dots The confinement found in colloidal semiconductor quantum dots enables the design of materials with tunable properties. García de Arquer et al . review the recent advances in methods for synthesis and surface functionalization of quantum dots that enable fine tuning of their optical, chemical, and electrical properties. These important developments have driven the commercialization of display and lighting applications and provide promising developments in the related fields of lasing and sensing. —MSL

Funder

U.S. Department of Energy

Argonne National Laboratory, Office of Science

Fundación Cellex

Los Alamos National Laboratory

Deutsche Forschungsgemeinschaft

Japan Society for the Promotion of Science

JSPS KAKENHI

Canada Research Chairs

Publisher

American Association for the Advancement of Science (AAAS)

Subject