Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

Author:

Hong Yi-Lun12ORCID,Liu Zhibo1ORCID,Wang Lei12ORCID,Zhou Tianya12,Ma Wei12ORCID,Xu Chuan1,Feng Shun13,Chen Long1,Chen Mao-Lin12,Sun Dong-Ming12ORCID,Chen Xing-Qiu12ORCID,Cheng Hui-Ming1245ORCID,Ren Wencai12ORCID

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.

2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.

3. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, P. R. China.

4. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, P. R. China.

5. Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK.

Abstract

Stabilizing monolayer nitrides with silicon Transition metal carbides and nitrides are nonlayered materials that in monolayer form have potentially useful electronic and chemical properties. These monolayers are usually made by chemical etching that produces flakes with surface defects that have poor air and water stability. Hong et al. report that introducing silicon during chemical vapor deposition growth of molybdenum nitride passivates the surface and prevents island formation. Centimeter-scale monolayer films of the semiconductor MoSi 2 N 4 form as a MoN 2 layer sandwiched by two Si-N bilayers. These layers possess high mechanical strength and ambient stability. Science , this issue p. 670

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Ministry of Science and Technology of the People's Republic of China

LiaoNing Revitalization Talents Program

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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