CsBi 4 Te 6 : A High-Performance Thermoelectric Material for Low-Temperature Applications

Author:

Chung Duck-Young1,Hogan Tim2,Brazis Paul3,Rocci-Lane Melissa3,Kannewurf Carl3,Bastea Marina4,Uher Ctirad4,Kanatzidis Mercouri G.1

Affiliation:

1. Department of Chemistry, Michigan State University and Center for Fundamental Materials Research, East Lansing, MI 48824, USA.

2. Electrical and Computer Engineering & Materials Science and Mechanics, Michigan State University, East Lansing, MI 48824, USA.

3. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA.

4. Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA.

Abstract

Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials need to be identified, especially for low-temperature applications in electronics and devices. The material CsBi 4 Te 6 has been synthesized and its properties have been studied. When doped appropriately, it exhibits a high thermoelectric figure of merit below room temperature (ZT max ∼0.8 at 225 kelvin). At cryogenic temperatures, the thermoelectric properties of CsBi 4 Te 6 appear to match or exceed those of Bi 2– x Sb x Te 3– y Se y alloys.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference43 articles.

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