High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Author:

Yue Shuai1234ORCID,Tian Fei56ORCID,Sui Xinyu14,Mohebinia Mohammadjavad7ORCID,Wu Xianxin14,Tong Tian2,Wang Zhiming3ORCID,Wu Bo8ORCID,Zhang Qing9ORCID,Ren Zhifeng5ORCID,Bao Jiming257ORCID,Liu Xinfeng14ORCID

Affiliation:

1. Chinese Academy of Sciences (CAS) Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China.

2. Department of Electrical and Computer Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USA.

3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China.

4. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China.

5. Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USA.

6. School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510006, China.

7. Materials Science and Engineering Program, University of Houston, Houston, TX 77204, USA.

8. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

9. School of Materials Science and Engineering, Peking University, Beijing 100871 China.

Abstract

Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of 1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt-second for holes at room temperature. Using pump-probe transient reflectivity microscopy, we monitored the diffusion of photoexcited carriers in single-crystal c-BAs to obtain their mobility. With near-bandgap 600-nanometer pump pulses, we found a high ambipolar mobility of 1550 ± 120 square centimeters per volt-second, in good agreement with theoretical prediction. Additional experiments with 400-nanometer pumps on the same spot revealed a mobility of >3000 square centimeters per volt-second, which we attribute to hot electrons. The observation of high carrier mobility, in conjunction with high thermal conductivity, enables an enormous number of device applications for c-BAs in high-performance electronics and optoelectronics.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3