Electrically tunable Feshbach resonances in twisted bilayer semiconductors

Author:

Schwartz Ido12ORCID,Shimazaki Yuya13ORCID,Kuhlenkamp Clemens145ORCID,Watanabe Kenji6ORCID,Taniguchi Takashi7ORCID,Kroner Martin1ORCID,Imamoğlu Ataç1ORCID

Affiliation:

1. Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.

2. Physics Department and Solid State Institute, Technion–Israel Institute of Technology, 32000 Haifa, Israel.

3. Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.

4. Department of Physics and Institute for Advanced Study, Technical University of Munich, 85748 Garching, Germany.

5. Munich Center for Quantum Science and Technology, 80799 Munich, Germany.

6. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.

7. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.

Abstract

Getting more from Moire Moire superlattices of twisted two-dimensional materials have emerged as a new paradigm for exploring strongly correlated electron systems. Once fabricated, however, the electronic correlations and the subsequent behavior of any device structure tend to be fixed. Schwartz et al . show that further sandwiching of the bilayer heterostructures between graphene electrical gates can provide a route to controlling the electronic properties in each layer separately and the electronic interaction strengths overall. The fine control of the electronic interactions, in terms of a tunable Feshbach resonance, provides a platform to explore many-body physics and quantum simulation. —ISO

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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