Accurate Numerical Methods for Modeling Forward Characteristics of High Temperature Capable Schottky Diodes

Abstract

The paper discusses two algorithms for accurately determining solutions to the transcendental thermionic emission equation, which is the cornerstone of forward electrical behavior in Schottky diodes. The numerical techniques are developed based on the Newton-Raphson and Halley methods. Both approaches use distinct forms for the thermionic emission expression, emphasizing robustness against numerical overflows. Parameter initialization, complexity and applicability are discussed for each technique. A comparison is carried out between forward characteristics simulated with the two methods, which are then also used for characterizing real SiC-Schottky diodes. Results evince complete compatibility and highly accurate approximations of experimental measurements (R2≅99.9%) on devices with different contact compositions.