Affiliation:
1. Adhiyamaan College of Engineering (Autonomous)
2. Government College of Engineering
Abstract
Abstract
The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (𝛟B) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.
Publisher
Research Square Platform LLC
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