CIGSS Electrodeposition from Improved Electrolytes

Abstract

Abstract Due to its wider band-gap than CuInGaSe2 [CIGS], Cu(In,Ga)(S,Se)2 [CIGSS] offers significant superiority compared to CuInGaSe2 as solar cell thin film. According to earlier reports, the manufacturing of CIGSS requires the addition of elements during the annealing process using a hydrogen sulfide partial pressure or from the vapor phase using a lengthy and difficult-to-control procedure. Our CIGSS electrodeposition electrolyte is comparable to the CIGS electrodeposition electrolyte in composition, but it also adds sulfur thiosulphate as a sulfur source, and the pH of the electrolyte is sustained below 2. The method creates the CIGSS compound with the desired stoichiometry without adding any elements from the vapor phase during annealing. There are supplied example polarization curves for several speeds of disk rotation. The annealing procedure did not require the addition of any metal.