Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
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Publisher
IOP Publishing
Link
http://stacks.iop.org/1347-4065/54/i=3/a=030207/pdf
Reference23 articles.
1. A CW external-cavity surface-emitting laser
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5. Surface activated bonding of silicon wafers at room temperature
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