Layer-by-layer growth of ε-Ga2O3 thin film by metal–organic chemical vapor deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.7567/APEX.11.101101/pdf
Reference30 articles.
1. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. Quasiparticle bands and spectra ofGa2O3polymorphs
4. A review of Ga2O3materials, processing, and devices
5. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
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1. Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD;Materials Science in Semiconductor Processing;2024-08
2. Structural, Optical, and Electrical Characteristics of Metastable κ-phase Ga2O3 Grown by Metal-Organic Chemical Vapor Deposition Using H2O as an Oxygen Precursor;Applied Science and Convergence Technology;2024-07-30
3. Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3;Physics Letters A;2024-07
4. Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates;Journal of Alloys and Compounds;2024-06
5. Improved heteroepitaxy of κ-Ga2O3 on c-plane sapphire by initial mist flow stabilization during mist chemical vapor deposition;Thin Solid Films;2024-02
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