High efficiency a-Si:H/a-SiGe:H tandem solar cells fabricated with the combination of V- and U-shaped band gap profiling techniques-Reference-Cited by-同舟云学术

High efficiency a-Si:H/a-SiGe:H tandem solar cells fabricated with the combination of V- and U-shaped band gap profiling techniques

Published:2015-07-22 Issue:8S1 Volume:54 Page:08KB08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inthisang Sorapong,Krajangsang Taweewat,Hongsingthong Aswin,Limmanee Amornrat,Kittisontirak Songkiate,Jaroensathainchok Suttinan,Moolakorn Apichan,Dousse Adrien,Sritharathikhun Jaran,Sriprapha Kobsak

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=8S1/a=08KB08/pdf

Reference16 articles.

1. A direct correlation between film structure and solar cell efficiency for HWCVD amorphous silicon germanium alloys

2. Characterization of high rate a-SiGe:H thin films fabricated by 55kHz PECVD

3. Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system

4. Effects of very high hydrogen dilution at low temperature on hydrogenated amorphous silicon germanium

5. Effect of an inter-electrode distance in VHF-PECVD and gas flow ratios on a-SiGeC:H films and solar cells by using monomethyl germane as a germanium source

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