Effect of temperature in titanium chemical mechanical planarization
Author:
Publisher
IOP Publishing
Link
http://stacks.iop.org/1347-4065/54/i=7/a=076502/pdf
Reference22 articles.
1. Reliability Improvement By Adopting Ti-barrier Metal For Porous Low-k ILD Structure
2. Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects
3. Ti-based Barrier for Cu Interconnect Applications
4. Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium
5. Role of oxidizer in the chemical mechanical planarization of the Ti/TiN barrier layer
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